E/W-Band CPW-based Amplifier MMICs Fabricated in a 60 nm GaN-on-Silicon Foundry Process
Paper i proceeding, 2021

This paper presents an experimental evaluation of two co-planar waveguide (CPW) based E/W-band amplifier MMICs realised in a 60 nm GaN-on-Si foundry process. A one-stage amplifier and a two-stage amplifier realised in this process have a measured maximum gain of 8 dB and 16 dB at 73-74 GHz, respectively. The two amplifiers have a measured gain of 3 dB and 7 dB at 93 GHz when the drain voltage (Vd) is 10 V and the drain current (Id) is 15 mA per stage. The two-stage amplifier has a measured noise figure (NF) of 2.7-3.8 dB and 2.9-4.1 dB at 90-95 GHz when the Id is 10 mA and Vd is 5 V and 10 V, respectively. The measured NF of this amplifier is equal to 4-6 dB at 92-95 GHz when an Id of 10-20 mA is used in each stage with same drain bias.

60 nm GaN-on-Si MMIC process

W-band amplifiers

power handling

noise characterization

Författare

Robert Malmqvist

Totalförsvarets forskningsinstitut (FOI)

Rolf Jonsson

Totalförsvarets forskningsinstitut (FOI)

Anders Bernland

Totalförsvarets forskningsinstitut (FOI)

M. Q. Bao

Ericsson AB

Remy Leblanc

OMMIC S.A.S.

Koen Buisman

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Ericsson AB

EuMIC 2020 - 2020 15th European Microwave Integrated Circuits Conference

137-140 9337298

15th European Microwave Integrated Circuits Conference, EuMIC 2020
Utrecht, Netherlands,

Ämneskategorier

Pappers-, massa- och fiberteknik

Kemiska processer

Annan elektroteknik och elektronik

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Senast uppdaterat

2021-03-12