Non-Thermal Absorption and Quantum Efficiency of SINIS Bolometer
Artikel i vetenskaplig tidskrift, 2021

We study mechanisms of absorption in two essentially different types of superconductor-insulator-normal metal-insulator-superconductor (SINIS) bolometers with absorber directly placed on Si wafer and with absorber suspended above the substrate. The figure of merit for quantum photon absorption is quantum efficiency equal to the number of detected electrons for one photon. The efficiency of absorption is dramatically dependent on phonon losses to substrate and electrodes, and electron energy losses to electrodes through tunnel junctions. The maximum quantum efficiency can approach n = hf/kT = 160 at f = 350 GHz T = 0.1 K, and current responsivity dI/dP = e/kT in quantum gain bolometer case, contrary to photon counter mode with quantum efficiency of n = 1 and responsivity dI/dP = e/hf. In experiments, we approach intrinsic quantum efficiency up to n = 80 electrons per photon in bolometer with suspended absorber, contrary to quantum efficiency of about one for absorber on the substrate. In the case of suspended Cu and Pd absorber, Kapitsa resistance protect from power leak to Al electrodes.

Bolometers

superconducting microwave devices

submillimeter wave integrated circuits

nanoelectronics

Författare

Michael Tarasov

National Research University of Electronic Technology (MIET)

A. A. Gunbina

Russian Academy of Sciences

R. Yusupov

National Research University of Electronic Technology (MIET)

Artem Chekushkin

National Research University of Electronic Technology (MIET)

Daria V. Nagirnaya

National Research University of Electronic Technology (MIET)

S. Lemzyakov

Russian Academy of Sciences

V. F. Vdovin

Russian Academy of Sciences

Valerian S. Edelman

Russian Academy of Sciences

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Dag Winkler

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

IEEE Transactions on Applied Superconductivity

1051-8223 (ISSN)

Vol. 31 5 9347750

Multifunktionella gränsytor i komplexa metalloxider för styrbar elektronik

Vetenskapsrådet (VR), 2017-01-01 -- 2020-12-31.

Ämneskategorier

Atom- och molekylfysik och optik

Annan fysik

Den kondenserade materiens fysik

DOI

10.1109/TASC.2021.3057327

Mer information

Senast uppdaterat

2021-04-16