Ultra-low contact resistance in graphene devices at the Dirac point
Artikel i vetenskaplig tidskrift, 2018

Contact resistance is one of the main factors limiting performance of short-channel graphene field-effect transistors (GFETs), preventing their use in low-voltage applications. Here we investigated the contact resistance between graphene grown by chemical vapor deposition (CVD) and different metals, and found that etching holes in graphene below the contacts consistently reduced the contact resistance, down to 23  m with Au contacts. This low contact resistance was obtained at the Dirac point of graphene, in contrast to previous studies where the lowest contact resistance was obtained at the highest carrier density in graphene (here 200  m was obtained under such conditions). The 'holey' Au contacts were implemented in GFETs which exhibited an average transconductance of 940 S m−1 at a drain bias of only 0.8 V and gate length of 500 nm, which out-perform GFETs with conventional Au contacts.


L. Anzi

Politecnico di Milano

Aida Mansouri

Politecnico di Milano

P. Pedrinazzi

Politecnico di Milano

E. Guerriero

Politecnico di Milano

M. Fiocco

Politecnico di Milano

A. Pesquera

Graphenea SA

A. Centeno

Graphenea SA

A. Zurutuza

Graphenea SA

A. Behnam

University of Illinois

E. A. Carrion

University of Illinois

E. Pop

Stanford University

R. Sordan

Politecnico di Milano

2D Materials

2053-1583 (eISSN)

Vol. 5 2 025014



Annan kemiteknik

Annan materialteknik



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