Oxygen-Driven Growth Regulation and Defect Passivation in Chemical Vapor Deposited MoS2 Monolayers
Artikel i vetenskaplig tidskrift, 2021

Due to the lowest formation energies, sulfur vacancies are inevitable in the vapor-phase chemical vapor deposition (CVD) of MoS2, which act as deep donors and induce midgap defect states, making the material intrinsically n-type. The postgrowth oxygen passivation of such defects has been the subject of a large number of recent studies because passivation of defects augments the photoluminescence quantum yield by several orders. In this study, by introducing an SiO2/Si wafer in close proximity to the growth substrate, we were able to supply trace oxygen in situ during the growth while simultaneously enabling chemisorption of oxygen at defect sites on the basal plane of large-area MoS2 monolayers. Low-temperature photoluminescence spectroscopy allowed us to distinguish clearly the nature of oxygen bonding in defective MoS2 grown with and without the trace oxygen. Chemisorption of oxygen enabled elimination of defect-related bound exciton emission at the near band edge transition of MoS2, leading to about 300% enhancement in the photoluminescence. We observed unusual splitting of the first-order A1g Raman mode in monolayer MoS2 films when the sulfur vacancies are not compensated by oxygen. The present study provides new experimental evidence to better distinguish between chemisorption and physisorption of oxygen and may serve as an effective way to tune the optical properties of van der Waals crystals during the large-area CVD process.

Författare

Santhosh Durairaj

SRM Institute of Science and Technology

Krishnamoorthy Ponnusamy

SRM Institute of Science and Technology

Nitin Babu Shinde

SRM Institute of Science and Technology

Senthil Kumar Eswaran

SRM Institute of Science and Technology

Vijayshankar Asokan

Chalmers, Kemi och kemiteknik, Energi och material, Oorganisk miljökemi

Jong Bae Park

Korea Basic Science Institute

S. Chandramohan

SRM Institute of Science and Technology

Crystal Growth & Design

1528-7483 (ISSN) 1528-7505 (eISSN)

Vol. In Press

Ämneskategorier

Oorganisk kemi

Atom- och molekylfysik och optik

Den kondenserade materiens fysik

DOI

10.1021/acs.cgd.1c00688

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Senast uppdaterat

2021-11-24