Enhancing the NIR Photocurrent in Single GaAs Nanowires with Radial p-i-n Junctions by Uniaxial Strain
Artikel i vetenskaplig tidskrift, 2021

III-V compound nanowires have electrical and optical properties suitable for a wide range of applications, including photovoltaics and photodetectors. Furthermore, their elastic nature allows the use of strain engineering to enhance their performance. Here we have investigated the effect of mechanical strain on the photocurrent and the electrical properties of single GaAs nanowires with radial p-i-n junctions, using a nanoprobing setup. A uniaxial tensile strain of 3% resulted in an increase in photocurrent by more than a factor of 4 during NIR illumination. This effect is attributed to a decrease of 0.2 eV in nanowire bandgap energy, revealed by analysis of the current-voltage characteristics as a function of strain. This analysis also shows how other properties are affected by the strain, including the nanowire resistance. Furthermore, electron-beam-induced current maps show that the charge collection efficiency within the nanowire is unaffected by strain measured up to 0.9%.


solar cells


I- V characteristics

II I- V nanowires



Jonatan Holmér

Chalmers, Fysik, Nano- och biofysik

Lunjie Zeng

Chalmers, Fysik, Nano- och biofysik

T. Kanne

Niels Bohr Institute

P. Krogstrup

Niels Bohr Institute

J. Nygard

Niels Bohr Institute

Eva Olsson

Chalmers, Fysik, Nano- och biofysik

Nano Letters

1530-6984 (ISSN) 1530-6992 (eISSN)

Vol. 2 21 9038-9043

Enabling Science and Technology through European Electron Microscopy (ESTEEM3)

Europeiska kommissionen (EU) (EC/H2020/823717), 2019-01-01 -- 2022-12-31.

Investigation of strain effects of semiconductor nanowires by in situ microscopy transmission electron microscopy

Vetenskapsrådet (VR) (2016-04618), 2017-01-01 -- 2020-12-31.


Nanovetenskap och nanoteknik


Textil-, gummi- och polymermaterial

Annan materialteknik

Den kondenserade materiens fysik


Chalmers materialanalyslaboratorium





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