A W-Band Single-Chip Receiver in a 60 nm GaN-on-Silicon Foundry Process
Paper i proceeding, 2021

This paper presents a compact W-band heterodyne receiver MMIC realised in a 60 nm GaN-on-Si foundry process. The single-chip receiver consists of an LNA with a measured NF of 4.4-5.5 dB at 90-95 GHz and a resistive down-conversion mixer with a frequency doubler for the multiplication of the LO signal. The measured receiver conversion gain is 0-7.4 dB/0-6.4 dB at 75-91 GHz when the LO/2 power is 20.5 dBm (IF=5 GHz/2 GHz). The measured receiver 1 dB compression point is found to occur at an input power level of -12 dBm and -9 dBm at 80 GHz and 91 GHz, respectively (IF=2GHz). To the best of our knowledge, this single-chip receiver achieves the smallest size (4 mm2), widest RF and IF bandwidths and highest linearity among reported GaN single-chip receivers in this frequency range. The receiver noise figure can be reduced by using an alternative GaN-on-Si LNA design with a measured average NF of 3.6-4.0 dB at 75-95 GHz and a measured maximum input 1 dB compression point of -3 dBm at 95 GHz.

Gallium Nitride

frequency conversion


low-noise amplifier




Robert Malmqvist

Totalförsvarets forskningsinstitut (FOI)

Rolf Jonsson

Totalförsvarets forskningsinstitut (FOI)

M. Q. Bao

Ericsson AB

Remy Leblanc


Koen Buisman

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Kristoffer Andersson

Totalförsvarets forskningsinstitut (FOI)

EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference

9782874870644 (ISBN)

16th European Microwave Integrated Circuits Conference, EuMIC 2021
London, United Kingdom,




Annan elektroteknik och elektronik



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