Fabrication of nis and sis nanojunctions with aluminum electrodes and studies of magnetic field influence on iv curves
Artikel i vetenskaplig tidskrift, 2021

Samples of superconductor–insulator–superconductor (SIS) and normal metal–insulator– superconductor (NIS) junctions with superconducting aluminum of different thickness were fabricated and experimentally studied, starting from conventional shadow evaporation with a suspended resist bridge. We also developed alternative fabrication by magnetron sputtering with twostep direct e-beam patterning. We compared Al film grain size, surface roughness, resistivity deposited by thermal evaporation and magnetron sputtering. The best-quality NIS junctions with large superconducting electrodes approached a resistance R(0)/R(V2Δ) factor ratio of 1000 at 0.3 K and over 10,000 at 0.1 K. At 0.1 K, R(0) was determined completely by the Andreev current. The contribution of the single-electron current dominated at V > VΔ/2. The single-electron resistance extrapolated to V = 0 exceeded the resistance R(V2Δ) by 3 × 109. We measured the influence of the magnetic field on NIS junctions and described the mechanism of additional conductivity due to induced Abrikosov vortices. The modified shape of the SINIS bolometer IV curve was explained by Joule overheating via NIN (normal metal–insulator–normal metal) channels.

SIS

Abrikosov vortices

junctions

SIN

Normal metal

Insulator

superconductor

Författare

Mikhail Tarasov

Russian Academy of Sciences

Alexandra Gunbina

Russian Academy of Sciences

Mikhail Fominsky

Russian Academy of Sciences

Artem Chekushkin

Russian Academy of Sciences

Vyacheslav E. Vdovin

Russian Academy of Sciences

Valery Koshelets

Russian Academy of Sciences

Elizaveta Sohina

National Research University Higher School of Economics

Kapitza Institute for Physical Problems RAS

Alexei Kalaboukhov

Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik

Valerian Edelman

Kapitza Institute for Physical Problems RAS

Electronics (Switzerland)

20799292 (eISSN)

Vol. 10 23 2894

Ämneskategorier

Oorganisk kemi

Den kondenserade materiens fysik

DOI

10.3390/electronics10232894

Mer information

Skapat

2023-07-24