Low-Temperature Effects on Electron Transport in Small-Diameter Silicon Nanowire
Paper i proceeding, 2023

We report on modeling studies on the effect of very low temperatures (4K-77K) on the behavior of electron transport in a [110] axially aligned, 1.3 nm diameter unstrained silicon nanowire (SiNW). A sp3d5s * tight-binding scheme is used to calculate the band structure within an Ensemble Monte Carlo simulation. Electron scattering occurs through bulk-acoustic and bulk-optical phonons and includes intra-subband and inter-subband events. A comparison with room temperature (300K) shows that at lower temperatures, average electron steady-state drift velocity increases by 2 or more times at relatively moderate electric fields. Transient average electron velocity also shows a more pronounced streaming motion. This is attributed to an overall decrease in electron-phonon scattering rates with temperature.

Monte Carlo

nanotechnology

nanowire, phonon, cryogenic,

Författare

Amit Verma

Texas A&M University - Kingsville

Daryoush Shiri

Chalmers, Mikroteknologi och nanovetenskap, Kvantteknologi

Reza Nekovei

Texas A&M University - Kingsville

2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)

31-34
9798350335460 (ISBN)

2023 IEEE Nanotechnology Materials and Devices Conference (NMDC)
Paestum (Salerno), ,

Styrkeområden

Nanovetenskap och nanoteknik

Materialvetenskap

Fundament

Grundläggande vetenskaper

Infrastruktur

Nanotekniklaboratoriet

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1109/NMDC57951.2023.10343599

Mer information

Senast uppdaterat

2024-01-19