Role of sputtered atom and ion energy distribution in films deposited by physical vapor deposition: A molecular dynamics approach
Artikel i vetenskaplig tidskrift, 2024
We present a comparative molecular dynamics simulation study of copper film growth between various physical vapor deposition (PVD) techniques: a constant energy neutral beam, thermal evaporation, dc magnetron sputtering, high-power impulse magnetron sputtering (HiPIMS), and bipolar HiPIMS. Experimentally determined energy distribution functions were utilized to model the deposition processes. Our results indicate significant differences in the film quality, growth rate, and substrate erosion. Bipolar HiPIMS shows the potential for an improved film structure under certain conditions, albeit with increased substrate erosion. Bipolar HiPIMS (+180 V and 10% Cu+ ions) exhibited the best film properties in terms of crystallinity and atomic stress among the PVD processes investigated.
Författare
Soumya Atmane
GREMI Groupe de Recherches sur l'Energetique des Milieux Ionises
Alexandre Maroussiak
GREMI Groupe de Recherches sur l'Energetique des Milieux Ionises
Amaël Caillard
GREMI Groupe de Recherches sur l'Energetique des Milieux Ionises
Anne Lise Thomann
GREMI Groupe de Recherches sur l'Energetique des Milieux Ionises
Movaffaq Kateb
Chalmers, Fysik, Kondenserad materie- och materialteori
J. T. Gudmundsson
Háskóli Íslands
Kungliga Tekniska Högskolan (KTH)
Pascal Brault
MS4ALL
GREMI Groupe de Recherches sur l'Energetique des Milieux Ionises
Journal of Vacuum Science and Technology A
0734-2101 (ISSN) 15208559 (eISSN)
Vol. 42 6 060401Ämneskategorier
Materialteknik
Fysik
Kemi
DOI
10.1116/6.0004134