A GaN MMIC Wideband Continuous-Mode Doherty Power Amplifier for 6G FR3 cmWave Applications
Paper i proceeding, 2024

This paper presents a 10-14 GHz Doherty power amplifier (PA) implemented in GaN on SiC MMIC process aimed for future 6G FR3 centimeter-wave (cmWave) applications. We propose the theory and design of the continuous-mode (CM) operations to extend Doherty PA bandwidth. To demonstrate the
viability of the concept, a prototype GaN MMIC CM Doherty PA was fabricated and fully characterized. Experimental results exhibit a peak power added efficiency (PAE) of 28% - 38% and back-off PAE of 21%- 31%, respectively, with an output power higher than 34 dBm across the operating frequencies.

wideband

6G

gallium nitride (GaN)

power amplifier (PA)

Continuous mode

MMIC

load modulation

Doherty

Författare

Han Zhou

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Victor Åberg

Embedded Electronics Systems and Computer Graphics

Haojie Chang

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024

170-173
9782874870781 (ISBN)

2024 19th European Microwave Integrated Circuits Conference, EuMIC 2024
Paris, France,

Styrkeområden

Informations- och kommunikationsteknik

Nanovetenskap och nanoteknik

Infrastruktur

Kollberglaboratoriet

Drivkrafter

Hållbar utveckling

Innovation och entreprenörskap

Lärande och undervisning

Pedagogiskt arbete

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.23919/EuMIC61603.2024.10732713

Mer information

Senast uppdaterat

2024-12-13