Nb/Al-AlN/Nb SIS junctions grown with substrate bias during plasma nitridation of the tunnel barrier
Paper i proceeding, 2025

We investigate the influence of substrate bias on the plasma nitridation process to form tunnel barriers in superconducting tunnel junctions, especially focusing on the bias effects on the barrier transparency. In addition, we assess the role of substrate bias in the nitridation process in the enhancement of the reproducibility of AlN-SIS fabrication process. We find that this parameter is critical to optimize the fabrication of high-performance tunnel-junctions for superconducting mixer technology.

AlN tunnel barrier

Superconducting tunnel junctions

Nb/Al-AlN/Nb junctions

Författare

Alexei Pavolotski

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

François Joint

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

Erik Sundin

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

Vincent Desmaris

Chalmers, Rymd-, geo- och miljövetenskap, Onsala rymdobservatorium

34th IEEE International Symposium on Space THz Technology

34th IEEE International Symposium on Space THz Technology (ISSTT 2025)
Berlin, Germany,

Ämneskategorier (SSIF 2025)

Annan fysik

Annan materialteknik

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Skapat

2026-09-01