Complex crater formation on silicon surfaces by low-energy Ar cluster ion implantation
Artikel i vetenskaplig tidskrift, 2004

Silicon samples were implanted by small mass-selected Ar cluster and Ar+ monomer ions with energies in the range of 1.5-18.0 keV/ion. Atomic force microscopy (AFM) shows simple and complex crater formation on the Si surface at the collision spots. A typical complex crater is surrounded by a low-height (0.5 nm) rim and it encloses a centre-positioned cone-shaped hillock with height of up to 3.5 nm depending on the implantation conditions. The morphology and dimensions of the craters and hillocks are studied as a function of the cluster size and implantation energy. A model explaining the hillock formation with relation to the thermal-transfer effect and local target melting at the collision spot is proposed.

surface morphology

atomic force microscopy

Cluster ion implantation

Författare

Vladimir Popok

Chalmers, Institutionen för experimentell fysik, Atomfysik

Sergei Prasalovich

Göteborgs universitet

Eleanor E B Campbell

Göteborgs universitet

Surface Science

0039-6028 (ISSN)

Vol. 566-568 1179-1184

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1016/j.susc.2004.06.082