GaAs single-barrier varactors for millimeter-wave triplers: guidelines for enhanced performance
Artikel i vetenskaplig tidskrift, 1994

Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barriers. By placing a thin AlAs layer in the center of an Al0.4Ga0.6As barrier, and using In0.2Ga0.8As spacers, one can increase the effective barrier height, thereby achieving SBVs with both high Q and good capacitance-modulation characteristics. Simulation of a 192-GHz tripler using these varactors shows purely reactive multiplication, without the output-power saturation both predicted and observed in triplers using leaky-barrier SBVs.

QBV

varactors

HBV

SBV

Författare

Kathiravan Krishnamurthi

Svein M. Nilsen

Institutionen för mikrovågsteknik

Robert G. Harrison

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 42 2512-2516

Ämneskategorier

Elektroteknik och elektronik

DOI

10.1109/22.339790