Suppression of higher order transverse modes and oxide modes in 1.3 µm InGaAs VCSELs by an inverted surface relief
Artikel i vetenskaplig tidskrift, 2007

It is shown, by a systematic variation of design parameters, that the use of an inverted surface relief is very effective for suppressing higher order transverse modes in oxide confined 1.3-mum InGaAs vertical-cavity surface-emitting lasers (VCSELs). Single-mode emission is achieved for a large variety of oxide aperture and surface relief diameters, with optimum designs, having a surface relief with a diameter half of that of the oxide aperture, producing 1.1-1.3 mW of single-mode power. It is also shown that the anti-phase layer employed to enable the use of an inverted surface relief is effective for suppressing oxide modes that otherwise appear in oxide confined VCSELs with a large detuning between the gain peak and the cavity resonance

semiconductor lasers

indium compounds

surface emitting lasers

III-V semiconductors

gallium arsenide

laser modes

Författare

Emma Söderberg

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Peter Modh

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Johan Gustavsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Anders Larsson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik

Z. Zhang

J Berggren

M Hammar

IEEE Photonics Technology Letters

Vol. 19 327-

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Atom- och molekylfysik och optik

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2017-10-08