Nb3Al thin film deposition for low-noise terahertz electronics
Artikel i vetenskaplig tidskrift, 2008

Higher energy gap superconducting materials were always interesting for low-noise mixer applications such as superconductor-insulator-superconductor tunnel junctions (SIS) and hot-electron bolometer (HEB) used in sub-millimeter and terahertz parts of electro-magnetic spectrum. Here, we report a novel approach for producing Nb3Al thin film by co-sputtering from two confocally arranged Nb and Al dc-magnetrons onto substrate heated up to 830°C. Characterization of the deposited films revealed presence of the A15 phase and measured critical temperature was up to 15.7 K with the transition width 0.2-0.3 K for a 300 nm thick film. We measured the film critical magnetic field and studied influence of annealing on the film properties. We have investigated compositional depth profile of the deposited films by spectroscopy of reflected electrons.

Författare

Dimitar Milkov Dochev

Chalmers, Institutionen för radio- och rymdvetenskap, Avancerad mottagarutveckling

Alexey Pavolotskiy

Chalmers, Institutionen för radio- och rymdvetenskap, Avancerad mottagarutveckling

Victor Belitsky

Chalmers, Institutionen för radio- och rymdvetenskap, Avancerad mottagarutveckling

Hans Olofsson

Chalmers, Institutionen för radio- och rymdvetenskap, Nationella anläggningen för radioastronomi

Journal of Physics : Conference Series

Vol. 97 012072 (6 pp.)-

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