Effect of the misorientation of the 4H-SiC substrate on the open volume defects in GaN grown by metal-organic chemical vapor deposition
Artikel i vetenskaplig tidskrift, 2006

Positron annihilation spectroscopy has been used to study GaN grown by metal-organic chemical vapor deposition on misoriented 4H-SiC substrates. Two kinds of vacancy defects are observed: Ga vacancies and larger vacancy clusters in all the studied layers. In addition to vacancies, positrons annihilate at shallow traps that are likely to be dislocations. The results show that the vacancy concentration increases and the shallow positron trap concentration decreases with the increasing substrate misorientation.

semiconductor growth

MOCVD

vacancies (crystal)

wide band gap semiconductors

positron annihilation

dislocations

III-V semiconductors

gallium compounds

Författare

Elisabeth Tengborn

Chalmers, Teknisk fysik, Subatomär fysik

M Rummukainen

F. Tuomisto

K. Saarinen

M. Rudzinski

P. R. Hageman

P.K. Larsen

Anders Nordlund

Chalmers, Teknisk fysik, Nukleär teknik

Applied Physics Letters

Vol. 89 091905 3-

Ämneskategorier

Övrig annan teknik