Nature of adsorption on TiC(111) investigated with density-functional calculations
Artikel i vetenskaplig tidskrift, 2007
Extensive density-functional calculations are performed for chemisorption of atoms in the three first periods (H, B, C, N, O, F, Al, Si, P, S, and Cl) on the polar TiC(111) surface. Calculations are also performed for O on TiC(001), for full O(1x1) monolayer on TiC(111), as well as for bulk TiC and for the clean TiC(111) and (001) surfaces. Detailed results concerning atomic structures, energetics, and electronic structures are presented. For the bulk and the clean surfaces, previous results are confirmed. In addition, detailed results are given on the presence of C-C bonds in the bulk and at the surface, as well as on the presence of a Ti-based surface resonance (TiSR) at the Fermi level and of C-based surface resonances (CSR's) in the lower part of the surface upper valence band. For the adsorption, adsorption energies E-ads and relaxed geometries are presented, showing great variations characterized by pyramid-shaped E-ads trends within each period. An extraordinarily strong chemisorption is found for the O atom, 8.8 eV/adatom. On the basis of the calculated electronic structures, a concerted-coupling model for the chemisorption is proposed, in which two different types of adatom-substrate interactions work together to provide the obtained strong chemisorption: (i) adatom-TiSR and (ii) adatom-CSR's. This model is used to successfully describe the essential features of the calculated E-ads trends. The fundamental nature of this model, based on the Newns-Anderson model, should make it apt for general application to transition-metal carbides and nitrides and for predictive purposes in technological applications, such as cutting-tool multilayer coatings and MAX phases.
OXYGEN-ADSORBED TIC(111)
INITIO MOLECULAR-DYNAMICS
TITANIUM
ELECTRONIC-STRUCTURE
RAY PHOTOELECTRON-SPECTROSCOPY
ION-SCATTERING SPECTROSCOPY
WAVE BASIS-SET
TOTAL-ENERGY
TRANSITION-METAL CARBIDES
CALCULATIONS
SURFACE-CHEMISTRY
CARBIDE