Structure of thin-film oxides: an ab initio study of TiC/Alumina
Licentiatavhandling, 2008
Oxides and oxide films play a major role in present-day
technologies. Identification and analysis of their atomic and
electronic structure are important to develop new functional
materials. At the same time, the ionic character, complexity,
and structural flexibility make accurate
atomic structure determinations
difficult, both from the experimental and the theoretical
point of view.
This licentiate thesis presents an efficient
and general method to identify promising
candidates for oxide thin films and to study their
structural elements using ab initio
density functional theory calculations.
Thin films generated from
building blocks
of the complex bulk structure of (meta-)stable
oxides form a well-defined network of initial configurations.
Strong atomic relaxations are predicted and
characterized by ab initio calculations.
We order the resulting,
relaxed thin-film candidates
according to variations in ab initio
total energy and ab initio thermodynamic Gibbs
free energy. The relaxed structures for the most
favorable films provide insight on the atomic
configuration of the truly stable and metastable films.
The method is illustrated and tested
for thin-film alumina (Al2O3)
on a titanium carbide substrate (TiC).
The TiC/alumina system plays an important
role for wear-resistant coatings grown by
chemical-vapor deposition (CVD).
The bulk structures of the stable alpha-
and metastable kappa-Al2O3
lead to the identification of 38 initial thin-film
configurations for a given film thickness n,
including three different stoichiometric compositions,
Al_{4n-4}O_{6n}, Al_{4n-2}O_{6n}, and Al_{4n}O_{6n}.
The results of extensive density functional theory
studies show that the energetically most favorable
thin films differ heavily from their
initial structures and possess up to 60 %
tetrahedrally coordinated Al ions.
This is considerably more than in the main
bulk-alumina crystal structures. The method is
capable of catching thin film candidates with
structural building blocks that are not explicitly
included in the network of initial configurations.
The results of this licentiate thesis can have
implications for the theory description of CVD growth of
wear-resistant TiC/alumina multilayer coatings. We find that
the thermodynamically favored TiC/Al_{4n-4}O_{6n} systems,
stable in the physically relevant range of the oxygen chemical
potential, separate into a tightly bound O-monolayer on
TiC (TiC/O) and a weakly bound Al_{4(n-1)}O_{6(n-1)}
overlayer. Strongly binding films
are predicted to be stabilized only
at extreme UHV conditions
or by Ti defects between the tightly
bound O-monolayer and the alumina overlayer. The thesis
suggests that the nonequilibrium nature of the CVD growth
environment plays an important role in securing the necessary
strength of the TiC/alumina binding and the optimal alumina
nucleation.
Interface Atomic Structure
Growth
Alumina
Electronic Structure
DFT
Thin Film