Charge transfer between epitaxial graphene and silicon carbide
Artikel i vetenskaplig tidskrift, 2010
We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.
electron density
charge exchange
silicon compounds
transistors
semiconductor epitaxial layers
graphene
bilayer graphene
semiconductor doping
work function
monolayers
epitaxial growth
Författare
S. Kopylov
Lancaster University
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap, Kvantkomponentfysik
V. I. Fal'ko
Lancaster University
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 97 11 112109New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene)
Europeiska kommissionen (EU) (EC/FP7/257829), 2010-10-01 -- 2013-09-30.
Ämneskategorier
Fysik
DOI
10.1063/1.3487782