Gate-defined double quantum dot with integrated charge sensors realized in InGaAs/InP by incorporating a high- κ dielectric
Artikel i vetenskaplig tidskrift, 2010

A gate-defined double quantum dot with two integrated quantum point contact charge sensors is realized in an InGaAs/InP heterostructure by employing a high-kappa HfO2 thin film as gate dielectric and a polymer bridge technique. Clear honeycomb patterns are observed in the measured charge stability diagram of the double quantum dot and charge sensing signals of the quantum point contacts. It is also found that the quantum point contact charge sensors can detect the charge states in the double quantum dot even in the condition that the direct transport signal is not visible.

ELECTRON-TRANSPORT

INTERFACE

Författare

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

M Larsson

Lunds universitet

I. Maximov

Lunds universitet

H. Q. Xu

Lunds universitet

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 96 16 162107

Ämneskategorier

Annan teknik

DOI

10.1063/1.3409223