Ellipsometry studies of Si/Ge superlattices with embedded Ge dots
Artikel i vetenskaplig tidskrift, 2013

In this paper, we present an analysis for treating the spectroscopic ellipsometry response of Si/Ge superlattices (SLs) with embedded Ge dots. Spectroscopic ellipsometry (SE) measurement at room temperature was used to investigate optical and electronic properties of Si/Ge SLs which were grown on silicon (Si) wafers having aOE (c) 111 > crystallographic orientation. The results of the SE analysis between 200 nm and 1000 nm indicate that the SL system can effectively be described using an interdiffusion/intermixing model by assuming multicrystalline Si and Si1-x Ge (x) intermixing layers. The electronic transitions deduced from the analysis reveal Si-, Ge- and alloying-related critical energy points.


S. Kalem

TUBITAK Marmara Research Center

Örjan Arthursson

Chalmers, Mikroteknologi och nanovetenskap, Nanotekniklaboratoriet

P. Werner


Applied Physics A: Materials Science and Processing

0947-8396 (ISSN) 1432-0630 (eISSN)

Vol. 112 3 555-559





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