On-axis homoepitaxial growth of 4H-SiC PiN structure for high power applications
Paper i proceeding, 2013

We demonstrate on-axis homoepitaxial growth of 4H-SiC(0001) PiN structure on 3-inch wafers with 100% 4H polytype in the epilayer excluding the edges. The layers were grown with a thickness of 105 μm and controlled n-type doping of 4 x 1014 cm-3.The epilayers were completely free of basal plane dislocations, in-grown stacking faults and other epitaxial defects, as required for 10 kV high power bipolar devices. Some part of the wafer had a lifetime enhancement procedure to increase lifetime to above 2 μs using carbon implantation. An additional step of epilayer polishing was adapted to reduce surface roughness and implantation damage.

Chemical vapor deposition

Carrier lifetime

High power devices


Growth mechanism


J. ul Hassan

Linköpings universitet

I. Booker

Linköpings universitet

L. Lilja

Linköpings universitet

A. Hallen

Kungliga Tekniska Högskolan (KTH)

Martin Fagerlind

Chalmers, Mikroteknologi och nanovetenskap, Mikrovågselektronik

P. Bergman

Linköpings universitet

Erik Janzén

Linköpings universitet

Materials Science Forum

0255-5476 (ISSN)

Vol. 740-742 173-176

9th European Conference on Silicon Carbide and Related Materials, ECSCRM 2012
St. Petersburg, Russia,





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