Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride
Artikel i vetenskaplig tidskrift, 2011

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3N4/Si at 1000 degrees C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the sp(2) graphitic structures. The films show ohmic behavior with a sheet resistance of similar to 2.3-10.5 k Omega/square at room temperature. An electric field effect of similar to 2-10% (V-G=-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.

chemical vapour deposition

electrodes

Raman spectra

thin films

transistors

electric resistance

pyrolysis

carbon

self-assembly

Författare

Jie Sun

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Niclas Lindvall

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

M. T. Cole

University of Cambridge

K. B. K. Teo

AIXTRON Ltd.

Avgust Yurgens

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 98 25 252107

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Fysik

DOI

10.1063/1.3602921