Ideal half-filled intermediate band position in CuGaS 2 generated by Sb-related defect complex: A first-principles study
Artikel i vetenskaplig tidskrift, 2019
Författare
Dan Huang
Guangxi University
Guilin University of Electronic Technology
Yang Xue
Guangxi University
Wentong Zhou
Guangxi University
Jingwen Jiang
Guangxi University
Hua Ning
Guangxi University
Guilin University of Electronic Technology
Jin Guo
Guangxi University
Guilin University of Electronic Technology
Yu Jun Zhao
South China University of Technology
Rongzhen Chen
Chalmers, Data- och informationsteknik, CSE Verksamhetsstöd
Clas Persson
Universitetet i Oslo
Applied Physics Express
18820778 (ISSN) 18820786 (eISSN)
Vol. 12 2 021002Ämneskategorier
Atom- och molekylfysik och optik
Annan fysik
Den kondenserade materiens fysik
DOI
10.7567/1882-0786/aafa0d