Molecular beam epitaxy growth of AlAs 1-x Bi x
Artikel i vetenskaplig tidskrift, 2019
High quality AlAs 1-x Bi x layers with Bi composition of 3%-10.5% have been successfully grown by molecular beam epitaxy. The Bi incorporation is confirmed by Rutherford backscattering spectroscopy. For a 400 nm thick AlAsBi layer, the strain relaxation occurs when the Bi composition is larger than 6.5%. Flux ratio is calculated from Knudsen-cell model and Maxwell equation, according to the geometrical relationship of our equipment. The Bi incorporation increases with increasing the As-Al flux ratio as well as the Bi flux. The extrapolation lattice constant of hypothetic zincblende AlBi alloy is about 6.23 Å.
As-Al flux ratio
Rutherford backscattering spectroscopy
molecular beam epitaxy
AsBi
Författare
Chang Wang
ShanghaiTech University
Chinese Academy of Sciences
L Wang
Chinese Academy of Sciences
Xiaoyan Wu
Shanghai Jiao Tong University
Yanchao Zhang
ShanghaiTech University
Chinese Academy of Sciences
Hao Liang
Chinese Academy of Sciences
L. Yue
Chinese Academy of Sciences
Z. Zhang
Chinese Academy of Sciences
ShanghaiTech University
Xin Ou
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap, Fotonik
ShanghaiTech University
Chinese Academy of Sciences
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 34 3 034003Ämneskategorier
Fysikalisk kemi
Annan materialteknik
Den kondenserade materiens fysik
DOI
10.1088/1361-6641/aacf38