Precise control of material properties at the atomic level is at the core of modern technology. The surface of single-crystal silicon carbide provides such an opportunity: epitaxial graphene on silicon carbide. Just one atom thick single layer of carbon atoms can be grown deterministically in large scale (e.g. 6”), with a crystal structure coherently organized over the entire SiC surface.
This feature, unique to epitaxial graphene on SiC, allows going even further and use SiC as a platform to assemble metallic atoms in a controlled way. Such atomistic assemblies might result in macroscopic 2D materials with extreme property profiles and complex functionalities that lead to disruptive innovation in science & technology. Atoms can be assembled on top of a specially graphitized surface of SiC or intercalated at the interface of SiC and graphene.
In this project we address the study of these systems in an integrated manner, from growth to devices, targeting strategically important directions where these novel 2D materials might have substantial impact: (a) large-scale production technology, (b) sensing, (c) catalysis and (d) nanoelectronics.
To ensure the success of the project, we build on the expertise of key research groups in Sweden that guarantee exploration of growth and physicochemical material properties at the highest scientific quality. In collaboration with key industrial partners we aim at paving the road for various applications of these novel 2D materials.
Professor vid Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Forskarassistent vid Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Professor vid Applied Surface Chemistry
Funding years 2016–2021
Areas of Advance