Measurement of the shot noise in a single-electron transistor
Journal article, 2009
We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.
Quantum-Noise
Oscillations
Hanbury-Brown
Limit
Charge Sensitivity
Suppression
Tunnel-Junctions
Coulomb Blockade
Author
Serguei Kafanov
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Per Delsing
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Physical Review B - Condensed Matter and Materials Physics
24699950 (ISSN) 24699969 (eISSN)
Vol. 80 15 155320- 155320Areas of Advance
Nanoscience and Nanotechnology
Subject Categories
Condensed Matter Physics
DOI
10.1103/PhysRevB.80.155320