Measurement of the shot noise in a single-electron transistor
Artikel i vetenskaplig tidskrift, 2009

We have systematically measured the shot noise in a single-electron transistor (SET) as a function of bias and gate voltages. By embedding a SET in a resonance circuit we have been able to measure its shot noise at the resonance frequency 464 MHz, where the 1/f noise is negligible. We can extract the Fano factor which varies between 0.5 and 1 depending on the amount of Coulomb blockade in the SET, in very good agreement with the theory.

Quantum-Noise

Oscillations

Hanbury-Brown

Limit

Charge Sensitivity

Suppression

Tunnel-Junctions

Coulomb Blockade

Författare

Serguei Kafanov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Per Delsing

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 80 15 155320- 155320

Styrkeområden

Nanovetenskap och nanoteknik

Ämneskategorier

Den kondenserade materiens fysik

DOI

10.1103/PhysRevB.80.155320