A 110 GHz GaAs Schottky Diode Mixer on Quartz with planar LO feed
Paper in proceedings, 2005

A fixed-tuned 110 GHz subharmonically pumped GaAs schottky diode mixer design with planar LO feeding is presented. The design consists of a shielded microstrip circuit on a 5 mil thick quartz substrate, mounted in a full height WR-08 RF waveguide split block design. The UMS DBES105a diode series pair is used as a non-linear mixing element and substrate vias are used for the IF/DC ground return. The planar microstrip circuitry, waveguide interface and diode chip have been modeled and simulated in HFSS. Simulated results are showing a conversion loss of 10 dB, with less than 7 dBm LO power, with RF and LO bandwidths of more than 10%. Simulations will be verified with experimental results.


heterodyne systems

THz front-ends





GaAs schottky diode mixer


Peter Sobis

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Anders Emrich

Gigahertz, Uppsala Sweden, November 8-9 2005

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information