A 110 GHz GaAs Schottky Diode Mixer on Quartz with planar LO feed
Paper in proceedings, 2005

A fixed-tuned 110 GHz subharmonically pumped GaAs schottky diode mixer design with planar LO feeding is presented. The design consists of a shielded microstrip circuit on a 5 mil thick quartz substrate, mounted in a full height WR-08 RF waveguide split block design. The UMS DBES105a diode series pair is used as a non-linear mixing element and substrate vias are used for the IF/DC ground return. The planar microstrip circuitry, waveguide interface and diode chip have been modeled and simulated in HFSS. Simulated results are showing a conversion loss of 10 dB, with less than 7 dBm LO power, with RF and LO bandwidths of more than 10%. Simulations will be verified with experimental results.

millimeterwave

heterodyne systems

THz front-ends

submillimeter

fixed-tuned

subharmonic

radiometers

GaAs schottky diode mixer

Author

Peter Sobis

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Anders Emrich

Gigahertz, Uppsala Sweden, November 8-9 2005

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/8/2017