A 110 GHz GaAs Schottky Diode Mixer on Quartz with planar LO feed
Paper i proceeding, 2005
A fixed-tuned 110 GHz subharmonically pumped GaAs schottky diode
mixer design with planar LO feeding is presented. The design
consists of a shielded microstrip circuit on a 5 mil thick quartz
substrate, mounted in a full height WR-08 RF waveguide split block
design. The UMS DBES105a diode series pair is used as a non-linear
mixing element and substrate vias are used for the IF/DC ground
return. The planar microstrip circuitry, waveguide interface and
diode chip have been modeled and simulated in HFSS. Simulated
results are showing a conversion loss of 10 dB, with less than 7
dBm LO power, with RF and LO bandwidths of more than 10%.
Simulations will be verified with experimental results.
GaAs schottky diode mixer