High speed, low current density 850 nm VCSELs
Journal article, 2009

We report on the design, fabrication, and evaluation of large-aperture, oxide-confined 850 nm vertical cavity surface emitting lasers (VCSELs) with high modulation bandwidth at low current densities. We also compare the use of InGaAs and GaAs quantum wells (QWs) in the active region. Both VCSELs reach an output power of 9 mW at room temperature, with a thermal resistance of 1.9deg C/mW. The use of InGaAs QWs improves the high-speed performance and enables a small-signal modulation bandwidth of 20 GHz at 25degC and 15 GHz at 85degC. At a constant bias current density of only 11 kA/cm2, we generate open eyes under large-signal modulation at bit rates up to 25 Gbit/s at 85degC and 30 Gbit/s at 55degC.

Author

Petter Westbergh

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Johan Gustavsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Åsa Haglund

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mats Sköld

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Andrew Joel

IQE (Europe) Ltd.

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

IEEE Journal on Selected Topics in Quantum Electronics

1077-260X (ISSN)

Vol. 15 3 694-703 4838876

Subject Categories

Telecommunications

DOI

10.1109/JSTQE.2009.2015465

More information

Latest update

7/31/2019