Effects of Self-Heating on Planar Heterostructure Barrier Varactor Diodes
Journal article, 1998

The conversion efficiency for planar Al0.7GaAs-GaAs heterostructure barrier varactor triplers is shown to be reduced from a theoretical efficiency of 10% to 3% due to self-heating. The reduction is in accordance with measurements on planar Al0.7GaAs-GaAs heterostructure barrier varactor (HBV) triplers to 261 GHz at room temperature and with low temperature tripler measurements to 255 GHz. The delivered maximum output power at 261 GHz is 2.0 mW. Future HBV designs should carefully consider and reduce the device thermal resistance and parasitic series resistance. Optimization of the RF circuit for a 10 ?m diameter device yielded a delivered output power of 3.6 mW (2.5% conversion efficiency) at 234 GHz

varactor frequency tripler



Jan Stake

Department of Microwave Technology

Lars Dillner

Department of Microwave Technology

Stephen Jones

Chris Mann

J. Thornton

J.R. Jones

W.L. Bishop

Erik Kollberg

Department of Microelectronics

IEEE Transactions on Electron Devices

Vol. 45 11 2298-2303

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering



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