Effects of Self-Heating on Planar Heterostructure Barrier Varactor Diodes
Artikel i vetenskaplig tidskrift, 1998

The conversion efficiency for planar Al0.7GaAs-GaAs heterostructure barrier varactor triplers is shown to be reduced from a theoretical efficiency of 10% to 3% due to self-heating. The reduction is in accordance with measurements on planar Al0.7GaAs-GaAs heterostructure barrier varactor (HBV) triplers to 261 GHz at room temperature and with low temperature tripler measurements to 255 GHz. The delivered maximum output power at 261 GHz is 2.0 mW. Future HBV designs should carefully consider and reduce the device thermal resistance and parasitic series resistance. Optimization of the RF circuit for a 10 ?m diameter device yielded a delivered output power of 3.6 mW (2.5% conversion efficiency) at 234 GHz

varactor frequency tripler

HBV

Författare

Jan Stake

Institutionen för mikrovågsteknik

Lars Dillner

Institutionen för mikrovågsteknik

Stephen Jones

Chris Mann

J. Thornton

J.R. Jones

W.L. Bishop

Erik Kollberg

Institutionen för mikroelektronik

IEEE Transactions on Electron Devices

Vol. 45 2298-2303

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/16.726644