Analysis of Carrier Transport in a Heterostructure Barrier Varactor Diode Tripler
Paper in proceeding, 1997
We report the time evolution and the spatial variation of the conduction band, the electric field, and the carrier density for a GaAs/Al0.7GaAs Heterostructure Barrier Varactor diode operating in a 3x90 GHz frequency tripler. The third harmonic output power and optimal embedding impedances are given for two different diodes at pump powers of 50 mW and 100 mW.
HBV
Author
Jan Stake
Department of Microwave Technology
Stephen H. Jones
J. Robert Jones
Lars Dillner
Department of Microwave Technology
International Semiconductor Device Research Symposium (ISDRS)
183-186
Areas of Advance
Information and Communication Technology
Subject Categories
Other Electrical Engineering, Electronic Engineering, Information Engineering