Analysis of Carrier Transport in a Heterostructure Barrier Varactor Diode Tripler
Paper i proceeding, 1997

We report the time evolution and the spatial variation of the conduction band, the electric field, and the carrier density for a GaAs/Al0.7GaAs Heterostructure Barrier Varactor diode operating in a 3x90 GHz frequency tripler. The third harmonic output power and optimal embedding impedances are given for two different diodes at pump powers of 50 mW and 100 mW.



Jan Stake

Institutionen för mikrovågsteknik

Stephen H. Jones

J. Robert Jones

Lars Dillner

Institutionen för mikrovågsteknik

International Semiconductor Device Research Symposium (ISDRS)



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