High carrier mobility in low band gap polymer-based field-effect transistors
Journal article, 2005

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing IR light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is soln.-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V-1 s-1. [on SciFinder (R)]


Miaoxiang Chen

Xavier Crispin

Erik Per Perzon

Chalmers, Chemical and Biological Engineering, Polymer Technology

Mats Andersson

Chalmers, Chemical and Biological Engineering, Polymer Technology

Tonu Pullerits

Mattias Andersson

Olle Inganas

Magnus Berggren

Applied Physics Letters

Vol. 87 25 252105/1-252105/3

Subject Categories

Polymer Chemistry

Condensed Matter Physics

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