High carrier mobility in low band gap polymer-based field-effect transistors
Artikel i vetenskaplig tidskrift, 2005

A conjugated polymer with a low band gap of 1.21 eV, i.e., absorbing IR light, is demonstrated as active material in field-effect transistors (FETs). The material consists of alternating fluorene units and low band gap segments with electron donor-acceptor-donor units composed of two electron-donating thiophene rings attached on both sides of a thiadiazolo-quinoxaline electron-acceptor group. The polymer is soln.-processable and air-stable; the resulting FETs exhibit typical p-channel characteristics and field-effect mobility of 0.03 cm2 V-1 s-1. [on SciFinder (R)]


Miaoxiang Chen

Xavier Crispin

Erik Per Perzon

Chalmers, Kemi- och bioteknik, Polymerteknologi

Mats Andersson

Chalmers, Kemi- och bioteknik, Polymerteknologi

Tonu Pullerits

Mattias Andersson

Olle Inganas

Magnus Berggren

Applied Physics Letters

Vol. 87 25 252105/1-252105/3



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