Integration of parallel-plate ferroelectric varactors with BCB-on-silicon microstrip circuits
Paper in proceedings, 2004

A four mask process is developed to integrate parallel-plate ferroelectric varactors with BCB film microstrip circuits. A tri-layer stack, consisting of bottom electrode (M1), ferroelectric film and top electrode (M2), deposited on silicon substrate is used as a ground plane for microstrip circuits. A BCB film, spin coated on the tri-layer ground plane for microstrip circuits patterned in the third metal layer (M3). Simple circuits are fabricated to demonstrate the potential of the proposed integration

ferroelectric devices

varactors

spin coating

elemental semiconductors

microstrip circuits

dielectric thin films

silicon

Author

Dan Kuylenstierna

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Andrei Vorobiev

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Spartak Gevorgian

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2004 IEEE MTT-S International Microwave Symposium Digest, 6-11 June 2004

Vol. Vol.3 1907-10

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

0780383311

More information

Created

10/6/2017