Integration of parallel-plate ferroelectric varactors with BCB-on-silicon microstrip circuits
Paper i proceeding, 2004

A four mask process is developed to integrate parallel-plate ferroelectric varactors with BCB film microstrip circuits. A tri-layer stack, consisting of bottom electrode (M1), ferroelectric film and top electrode (M2), deposited on silicon substrate is used as a ground plane for microstrip circuits. A BCB film, spin coated on the tri-layer ground plane for microstrip circuits patterned in the third metal layer (M3). Simple circuits are fabricated to demonstrate the potential of the proposed integration

ferroelectric devices

varactors

spin coating

elemental semiconductors

microstrip circuits

dielectric thin films

silicon

Författare

Dan Kuylenstierna

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Andrei Vorobiev

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Spartak Gevorgian

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

2004 IEEE MTT-S International Microwave Symposium Digest, 6-11 June 2004

Vol. Vol.3 1907-10

Ämneskategorier

Elektroteknik och elektronik

ISBN

0780383311

Mer information

Skapat

2017-10-06