Giant field effect in self-assembled metallo-organic nanoscale networks
Journal article, 2005

Three-terminal devices have been produced by self-assembly of chemically stabilized gold clusters of 5–7 nm in diameter in a nanogap between the source and drain electrodes on top of an electrostatic gate made of oxidized aluminium. The conductivity of the devices with the agglomerates of clusters, self-assembled in the gap, was modulated substantially by the electric field of the gate. The effect is attributed to the mechanical deformation of the organic tunneling barriers between the gold clusters under the influence of Coulomb forces. A peculiar interplay between the mechanical deformations caused by the gate and the source-drain voltages leads to unusual current-voltage characteristics of the devices. A phenomenological theory based on these ideas has been developed.


Mohammad Kabir

Chalmers, Microtechnology and Nanoscience (MC2), Solid State Electronics

Andrey Danilov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Leonid Gorelik

Chalmers, Applied Physics, Condensed Matter Theory

Robert Shekhter

Mathias Brust

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Physical Review B

Vol. 72 235424-

Subject Categories

Condensed Matter Physics

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