Giant field effect in self-assembled metallo-organic nanoscale networks
Artikel i vetenskaplig tidskrift, 2005

Three-terminal devices have been produced by self-assembly of chemically stabilized gold clusters of 5–7 nm in diameter in a nanogap between the source and drain electrodes on top of an electrostatic gate made of oxidized aluminium. The conductivity of the devices with the agglomerates of clusters, self-assembled in the gap, was modulated substantially by the electric field of the gate. The effect is attributed to the mechanical deformation of the organic tunneling barriers between the gold clusters under the influence of Coulomb forces. A peculiar interplay between the mechanical deformations caused by the gate and the source-drain voltages leads to unusual current-voltage characteristics of the devices. A phenomenological theory based on these ideas has been developed.

Författare

Mohammad Kabir

Chalmers, Mikroteknologi och nanovetenskap (MC2), Fasta tillståndets elektronik

Andrey Danilov

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Leonid Gorelik

Chalmers, Teknisk fysik, Kondenserade materiens teori

Robert Shekhter

Mathias Brust

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Physical Review B

Vol. 72 235424-

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