Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier
Journal article, 2010

In this paper, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented. A method based on source–pull/load–pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Large-signal measurement results show that, across 1.9–4.3 GHz, 9–11-dB power gain and 57%–72% drain efficiency are obtained while the corresponding power-added efficiency (PAE) is 50%–62%. Moreover, an output power higher than 10 W is maintained over the band. Linearized modulated measurements using a 20-MHz long-term evolution signal with 11.2-dB peak-to-average ratio show an average PAE of 27% and 25%, an adjacent channel leakage ratio of -44 and -42 dBc at 2.5 and 3.5 GHz, respectively.

power amplifier (PA)

GaN HEMT

octave bandwidth

high efficiency

wideband matching networks

Author

Paul Saad

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Haiying Cao

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

Herbert Zirath

GigaHertz Centre

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Kristoffer Andersson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

GigaHertz Centre

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 58 7 1677-1685

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2010.2049770

More information

Created

10/7/2017