Design of a Highly Efficient 2–4-GHz Octave Bandwidth GaN-HEMT Power Amplifier
Artikel i vetenskaplig tidskrift, 2010

In this paper, the design, implementation, and experimental results of a high-efficiency wideband GaN-HEMT power amplifier are presented. A method based on source–pull/load–pull simulation has been used to find optimum source and load impedances across the bandwidth and then used with a systematic approach to design wideband matching networks. Large-signal measurement results show that, across 1.9–4.3 GHz, 9–11-dB power gain and 57%–72% drain efficiency are obtained while the corresponding power-added efficiency (PAE) is 50%–62%. Moreover, an output power higher than 10 W is maintained over the band. Linearized modulated measurements using a 20-MHz long-term evolution signal with 11.2-dB peak-to-average ratio show an average PAE of 27% and 25%, an adjacent channel leakage ratio of -44 and -42 dBc at 2.5 and 3.5 GHz, respectively.

power amplifier (PA)

GaN HEMT

octave bandwidth

high efficiency

wideband matching networks

Författare

Paul Saad

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Christian Fager

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Haiying Cao

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

Herbert Zirath

GigaHertz Centrum

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

Kristoffer Andersson

Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik

GigaHertz Centrum

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 58 1677-1685

Ämneskategorier

Annan elektroteknik och elektronik

DOI

10.1109/TMTT.2010.2049770