Charge transfer between epitaxial graphene and silicon carbide
Journal article, 2010
We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.
electron density
charge exchange
silicon compounds
transistors
semiconductor epitaxial layers
graphene
bilayer graphene
semiconductor doping
work function
monolayers
epitaxial growth
Author
S. Kopylov
Lancaster University
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
Sergey Kubatkin
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
V. I. Fal'ko
Lancaster University
Published in
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 97 Issue 11 art. no 112109Research Project(s)
New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene)
European Commission (EC) (EC/FP7/257829), 2010-10-01 -- 2013-09-30.
Categorizing
Subject Categories (SSIF 2011)
Physical Sciences
Identifiers
DOI
10.1063/1.3487782