Charge transfer between epitaxial graphene and silicon carbide
Artikel i vetenskaplig tidskrift, 2010

We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.

electron density

charge exchange

silicon compounds

transistors

semiconductor epitaxial layers

graphene

bilayer graphene

semiconductor doping

work function

monolayers

epitaxial growth

Författare

S. Kopylov

Lancaster University

A.Y. Tzalenchuk

National Physical Laboratory (NPL)

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

V. I. Fal'ko

Lancaster University

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 97 11 112109

New Electronics Concept: Wafer-Scale Epitaxial Graphene (ConceptGraphene)

Europeiska kommissionen (FP7), 2010-10-01 -- 2013-09-30.

Ämneskategorier

Fysik

DOI

10.1063/1.3487782