Charge transfer between epitaxial graphene and silicon carbide
Artikel i vetenskaplig tidskrift, 2010

We analyze doping of graphene grown on SiC in two models which differ by the source of charge transferred to graphene, namely, from SiC surface and from bulk donors. For each of the two models, we find the maximum electron density induced in monolayer and bilayer graphene, which is determined by the difference between the work function for electrons in pristine graphene and donor states on/in SiC, and analyze the responsivity of graphene to the density variation by means of electrostatic gates.

bilayer graphene

semiconductor doping

silicon compounds

graphene

work function

monolayers

charge exchange

semiconductor epitaxial layers

epitaxial growth

electron density

transistors

Författare

S. Kopylov

Lancaster University

A.Y. Tzalenchuk

National Physical Laboratory

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

V. I. Fal'ko

Lancaster University

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 97 112109

Ämneskategorier

Fysik

DOI

10.1063/1.3487782