Integrated MEMS-tunable VCSELs with high modulation bandwidth

Journal article, 2011

The modulation bandwidth of micromachined tunable VCSELs is typically limited by the parasitic capacitance associated with the large mesa platform for the movable mirror. Presented is a simple technology for wafer-scale integration of tunable VCSELs with low mesa capacitance and high modulation bandwidth. Small signal measurements show a 3dB bandwidth of up to 6 GHz over a tuning range of 18 nm. Digital modulation is demonstrated with error-free data transmission at 5 Gbit/s and eye diagrams at 10 Gbit/s.