Large-area uniform graphene-like thin films grown by chemical vapor deposition directly on silicon nitride
Journal article, 2011

Large-area uniform carbon films with graphene-like properties are synthesized by chemical vapor deposition directly on Si3N4/Si at 1000 degrees C without metal catalysts. The as deposited films are atomically thin and wrinkle- and pinhole-free. The film thickness can be controlled by modifying the growth conditions. Raman spectroscopy confirms the sp(2) graphitic structures. The films show ohmic behavior with a sheet resistance of similar to 2.3-10.5 k Omega/square at room temperature. An electric field effect of similar to 2-10% (V-G=-20 V) is observed. The growth is explained by the self-assembly of carbon clusters from hydrocarbon pyrolysis. The scalable and transfer-free technique favors the application of graphene as transparent electrodes.

transistors

electrodes

self-assembly

thin films

electric resistance

pyrolysis

Raman spectra

chemical vapour deposition

carbon

Author

Jie Sun

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Niclas Lindvall

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

M. T. Cole

University of Cambridge

K. B. K. Teo

AIXTRON Nanoinstruments Ltd.

Avgust Yurgens

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 98 25 252107

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Physical Sciences

DOI

10.1063/1.3602921

More information

Latest update

9/6/2018 1