Engineering and metrology of epitaxial graphene
Journal article, 2011

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. © 2011 Published by Elsevier Ltd. All rights reserved.

Graphene

Quantum Hall effect

Photochemical gate

Metrology

Author

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Karin Cedergren

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Solid State Communications

0038-1098 (ISSN)

Vol. 151 16 1094-1099

Subject Categories

Physical Sciences

DOI

10.1016/j.ssc.2011.05.020

More information

Created

10/7/2017