Engineering and metrology of epitaxial graphene
Artikel i vetenskaplig tidskrift, 2011

Here we review the concepts and technologies, in particular photochemical gating, which contributed to the recent progress in quantum Hall resistance metrology based on large scale epitaxial graphene on silicon carbide. © 2011 Published by Elsevier Ltd. All rights reserved.

Graphene

Quantum Hall effect

Photochemical gate

Metrology

Författare

Samuel Lara Avila

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Karin Cedergren

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Sergey Kubatkin

Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik

Solid State Communications

0038-1098 (ISSN)

Vol. 151 16 1094-1099

Ämneskategorier

Fysik

DOI

10.1016/j.ssc.2011.05.020

Mer information

Skapat

2017-10-07