Widely Tunable High-Power Semiconductor Disk Laser With Nonresonant AR-Assisted Gain Element on Diamond Heat Spreader
Journal article, 2011

We report on an optically pumped semiconductor disk laser with a wide wavelength tuning range and a high peak output power. This was achieved using a combination of efficient thermal management and a broadband gain element (GE) with carefully engineered spectral gain characteristics. For heat removal, a flip-chip bonding scheme on diamond was used. To provide high active mirror reflectance over a large wavelength region, the layered structure of the GE formed a nonresonant subcavity assisted by an antireflective structure. A peak output power of more than 7.5 W and a tuning range of 32 nm around the center wavelength of 995 nm were obtained.

Tuning

Tunable lasers

Laser excitation

Heat sinks

Semiconductor lasers

Multilayer interference coatings

Power generation

Author

Carl Borgentun

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chris Hessenius

University of Arizona

Jörgen Bengtsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Mahmoud Fallahi

University of Arizona

Anders Larsson

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

IEEE Photonics Journal

1943-0655 (ISSN) 1943-0647 (eISSN)

Vol. 3 5 946-953 6030901

Areas of Advance

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Telecommunications

DOI

10.1109/JPHOT.2011.2169947

More information

Created

10/6/2017